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MJD31C1G

In Stock: 7,659
MJD31C1G - onsemi - Transistors - Bipolar (BJT) - Single
REF: MJD31C1G onsemi
MJD31C1G

onsemi

TRANS NPN 100V 3A IPAK

MJD31C1G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN 100V 3A IPAK. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA, current - collector (ic) (max) 3 A.

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In Stock: 7,659

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A, 4V
Power - Max1.56 W
Frequency - Transition3MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

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Manufacturers in Transistors - Bipolar (BJT) - Single

NXP USA Inc. Nexperia USA Inc. Microsemi Corporation Toshiba Semiconductor and Storage Diotec Semiconductor Central Semiconductor Corp Rectron USA NTE Electronics, Inc Sanken Sanyo Ampleon USA Inc.

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