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MJD117-1G

In Stock: 179,485
MJD117-1G - onsemi - Transistors - Bipolar (BJT) - Single
REF: MJD117-1G onsemi
MJD117-1G

onsemi

TRANS PNP DARL 100V 2A IPAK

MJD117-1G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS PNP DARL 100V 2A IPAK. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA, current - collector (ic) (max) 2 A.

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In Stock: 179,485

Specifications

13 parameters
Product StatusActive
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75 W
Frequency - Transition25MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

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Manufacturers in Transistors - Bipolar (BJT) - Single

NXP USA Inc. Nexperia USA Inc. Microsemi Corporation Toshiba Semiconductor and Storage Diotec Semiconductor Central Semiconductor Corp Rectron USA NTE Electronics, Inc Sanken Sanyo Ampleon USA Inc.

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