Name: IRLW610ATM
Brand: onsemi
SKU: IRLW610ATM
Availability: InStock

REF: IRLW610ATM onsemi

IRLW610ATM

MOSFET N-CH 200V 3.3A I2PAK

IRLW610ATM is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 200V 3.3A I2PAK. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

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In Stock: 5,305

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.65A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 5 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	240 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 33W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA