Name: HGTP2N120CN
Brand: onsemi
SKU: HGTP2N120CN
Availability: InStock

REF: HGTP2N120CN onsemi

HGTP2N120CN

IGBT 1200V 13A 104W TO220AB

HGTP2N120CN is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 1200V 13A 104W TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 13 A.

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In Stock: 3,250

Specifications

17 parameters

Product Status	Obsolete
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	13 A
Current - Collector Pulsed (Icm)	20 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 2.6A
Power - Max	104 W
Switching Energy	96µJ (on), 355µJ (off)
Input Type	Standard

Gate Charge	30 nC
Td (on/off) @ 25°C	25ns/205ns
Test Condition	960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3