HGTP12N60C3 - onsemi - Transistors - IGBTs - Single
REF: HGTP12N60C3 onsemi
HGTP12N60C3

onsemi

IGBT 600V 24A 104W TO220AB

HGTP12N60C3 is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 600V 24A 104W TO220AB. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 24 A.

In Stock: 8,397

Specifications

17 parameters
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)24 A
Current - Collector Pulsed (Icm)96 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 12A
Power - Max104 W
Switching Energy380µJ (on), 900µJ (off)
Input TypeStandard
Gate Charge48 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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