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HGTP10N120BN

In Stock: 5,030
HGTP10N120BN - onsemi - Transistors - IGBTs - Single
REF: HGTP10N120BN onsemi
HGTP10N120BN

onsemi

IGBT 1200V 35A 298W TO220AB

HGTP10N120BN is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 1200V 35A 298W TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 35 A.

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In Stock: 5,030

Specifications

17 parameters
Product StatusLast Time Buy
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)35 A
Current - Collector Pulsed (Icm)80 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max298 W
Switching Energy320µJ (on), 800µJ (off)
Input TypeStandard
Gate Charge100 nC
Td (on/off) @ 25°C23ns/165ns
Test Condition960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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