HGTG18N120BND - onsemi - Transistors - IGBTs - Single
REF: HGTG18N120BND onsemi
HGTG18N120BND

onsemi

IGBT 1200V 54A 390W TO247

HGTG18N120BND is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 1200V 54A 390W TO247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 54 A.

In Stock: 6,448

Specifications

17 parameters
Product StatusObsolete
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)54 A
Current - Collector Pulsed (Icm)160 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 18A
Power - Max390 W
Switching Energy1.9mJ (on), 1.8mJ (off)
Input TypeStandard
Gate Charge165 nC
Td (on/off) @ 25°C23ns/170ns
Test Condition960V, 18A, 3Ohm, 15V
Reverse Recovery Time (trr)75 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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