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HGTG10N120BND

In Stock: 9,671
HGTG10N120BND - onsemi - Transistors - IGBTs - Single
REF: HGTG10N120BND onsemi
HGTG10N120BND

onsemi

IGBT NPT 1200V 35A TO247-3

HGTG10N120BND is a Transistors - IGBTs - Single manufactured by onsemi. IGBT NPT 1200V 35A TO247-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 35 A.

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In Stock: 9,671

Specifications

17 parameters
Product StatusLast Time Buy
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)35 A
Current - Collector Pulsed (Icm)80 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max298 W
Switching Energy850µJ (on), 800µJ (off)
Input TypeStandard
Gate Charge100 nC
Td (on/off) @ 25°C23ns/165ns
Test Condition960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)70 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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