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HGTD7N60C3S9A

In Stock: 2,189
HGTD7N60C3S9A - onsemi - Transistors - IGBTs - Single
REF: HGTD7N60C3S9A onsemi
HGTD7N60C3S9A

onsemi

IGBT 600V 14A TO252AA

HGTD7N60C3S9A is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 600V 14A TO252AA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 14 A.

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In Stock: 2,189

Specifications

17 parameters
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)14 A
Current - Collector Pulsed (Icm)56 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 7A
Power - Max60 W
Switching Energy165µJ (on), 600µJ (off)
Input TypeStandard
Gate Charge23 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

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