Name: HGTD1N120BNS9A
Brand: onsemi
SKU: HGTD1N120BNS9A
Price: 1.68 USD
Availability: InStock

REF: HGTD1N120BNS9A onsemi

HGTD1N120BNS9A

IGBT 1200V 5.3A 60W TO252AA

HGTD1N120BNS9A is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 1200V 5.3A 60W TO252AA. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 5.3 A.

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In Stock: 4,275

Specifications

17 parameters

Product Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	5.3 A
Current - Collector Pulsed (Icm)	6 A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 1A
Power - Max	60 W
Switching Energy	70µJ (on), 90µJ (off)
Input Type	Standard

Gate Charge	14 nC
Td (on/off) @ 25°C	15ns/67ns
Test Condition	960V, 1A, 82Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252AA