HGT1S20N60C3S9A

In Stock: 4,834
HGT1S20N60C3S9A - onsemi - Transistors - IGBTs - Single
REF: HGT1S20N60C3S9A onsemi
HGT1S20N60C3S9A

onsemi

IGBT 600V 45A TO263AB

HGT1S20N60C3S9A is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 600V 45A TO263AB. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, current - collector (ic) (max) 45 A.

In Stock: 4,834

Specifications

17 parameters
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)45 A
Current - Collector Pulsed (Icm)300 A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 20A
Power - Max164 W
Switching Energy295µJ (on), 500µJ (off)
Input TypeStandard
Gate Charge91 nC
Td (on/off) @ 25°C28ns/151ns
Test Condition480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)

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