Name: HGT1S20N60A4S9A
Brand: onsemi
SKU: HGT1S20N60A4S9A
Availability: InStock

REF: HGT1S20N60A4S9A onsemi

HGT1S20N60A4S9A

IGBT 600V 70A 290W TO263AB

HGT1S20N60A4S9A is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 600V 70A 290W TO263AB. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, current - collector (ic) (max) 70 A.

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In Stock: 8,872

Specifications

17 parameters

Product Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	70 A
Current - Collector Pulsed (Icm)	280 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 20A
Power - Max	290 W
Switching Energy	105µJ (on), 150µJ (off)
Input Type	Standard

Gate Charge	142 nC
Td (on/off) @ 25°C	15ns/73ns
Test Condition	390V, 20A, 3Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D²PAK (TO-263)