Name: HGT1S12N60A4S9A
Brand: onsemi
SKU: HGT1S12N60A4S9A
Availability: InStock

REF: HGT1S12N60A4S9A onsemi

HGT1S12N60A4S9A

IGBT 600V 54A 167W TO263AB

HGT1S12N60A4S9A is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 600V 54A 167W TO263AB. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, current - collector (ic) (max) 54 A.

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In Stock: 6,670

Specifications

17 parameters

Product Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	54 A
Current - Collector Pulsed (Icm)	96 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
Power - Max	167 W
Switching Energy	55µJ (on), 50µJ (off)
Input Type	Standard

Gate Charge	78 nC
Td (on/off) @ 25°C	17ns/96ns
Test Condition	390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D²PAK (TO-263)