H11G2M - onsemi - Optoisolators - Transistor, Photovoltaic Output
REF: H11G2M onsemi
H11G2M

onsemi

OPTOISO 4.17KV DARL W/BASE 6DIP

H11G2M is a Optoisolators - Transistor, Photovoltaic Output manufactured by onsemi. OPTOISO 4.17KV DARL W/BASE 6DIP. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 100°C, voltage - forward (vf) (typ) 1.3V, package / case 6-DIP (0.300", 7.62mm).

In Stock: 7,374

Tiered Pricing USD
1+ $0.9400 —
50+ $0.5288 -44%
100+ $0.4857 -48%
500+ $0.4083 -57%
1,000+ $0.3830 -59%
2,000+ $0.3615 -62%
5,000+ $0.3380 -64%
10,000+ $0.3234 -66%
25,000+ $0.3074 -67% BEST

Specifications

18 parameters
Product StatusActive
Number of Channels1
Voltage - Isolation4170Vrms
Current Transfer Ratio (Min)1000% @ 10mA
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)5µs, 100µs
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeDarlington with Base
Voltage - Output (Max)80V
Current - Output / Channel-
Voltage - Forward (Vf) (Typ)1.3V
Current - DC Forward (If) (Max)60 mA
Vce Saturation (Max)1V
Operating Temperature-40°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.300", 7.62mm)
Supplier Device Package6-DIP

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