Name: FQB6N80TM
Brand: onsemi
SKU: FQB6N80TM
Price: 2.21 USD
Availability: InStock

REF: FQB6N80TM onsemi

FQB6N80TM

MOSFET N-CH 800V 5.8A D2PAK

FQB6N80TM is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 800V 5.8A D2PAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 3

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 158W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB