FQA8N100C - onsemi - Transistors - FETs, MOSFETs - Single
REF: FQA8N100C onsemi
FQA8N100C

onsemi

MOSFET N-CH 1000V 8A TO3PN

FQA8N100C is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 1000V 8A TO3PN. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-3P-3, SC-65-3.

In Stock: 8,212

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.45Ohm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3220 pF @ 25 V
FET Feature-
Power Dissipation (Max)225W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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