IGBT MODULE 650V 40A 156W F2
FPF2G120BF07AS is a Transistors - IGBTs - Modules manufactured by onsemi. IGBT MODULE 650V 40A 156W F2. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case Module, current - collector (ic) (max) 40 A.
In Stock: 64
| Product Status | Obsolete |
|---|---|
| IGBT Type | Field Stop |
| Configuration | 3 Independent |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 40 A |
| Power - Max | 156 W |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 40A |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | - |
|---|---|
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | Module |
| Supplier Device Package | F2 |
Infineon Technologies
FS15R06XL4BOMA1
25.20000
RFQ
Infineon Technologies
F4250R17MP4B11BPSA1
181.62000
RFQ
Infineon Technologies
FP75R12KT4PB11BPSA1
150.92000
RFQ
Infineon Technologies
F3L150R07W2H3B11BPSA1
96.48000
RFQ
Infineon Technologies
FD300R12KS4HOSA1
120.55500
RFQ
Infineon Technologies
FS450R12OE4PBOSA1
565.75000
RFQ
Submit your RFQ and get a quote within 24 hours.
