FGY60T120SQDN - onsemi - Transistors - IGBTs - Single
REF: FGY60T120SQDN onsemi
FGY60T120SQDN

onsemi

IGBT 1200V 60A UFS

FGY60T120SQDN is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 1200V 60A UFS. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3 Variant, current - collector (ic) (max) 120 A.

In Stock: 4,233

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)120 A
Current - Collector Pulsed (Icm)240 A
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 60A
Power - Max517 W
Switching Energy-
Input TypeStandard
Gate Charge311 nC
Td (on/off) @ 25°C52ns/296ns
Test Condition600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device PackageTO-247-3

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