FGA50N100BNTDTU

In Stock: 2,239
FGA50N100BNTDTU - onsemi - Transistors - IGBTs - Single
REF: FGA50N100BNTDTU onsemi
FGA50N100BNTDTU

onsemi

IGBT 1000V 50A 156W TO3P

FGA50N100BNTDTU is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 1000V 50A 156W TO3P. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-3P-3, SC-65-3, current - collector (ic) (max) 50 A.

In Stock: 2,239

Specifications

17 parameters
Product StatusObsolete
IGBT TypeNPT and Trench
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)100 A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
Power - Max156 W
Switching Energy-
Input TypeStandard
Gate Charge275 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)1.5 µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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