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FGA50N100BNTD2

In Stock: 5,434
FGA50N100BNTD2 - onsemi - Transistors - IGBTs - Single
REF: FGA50N100BNTD2 onsemi
FGA50N100BNTD2

onsemi

IGBT 1000V 50A 156W TO3P

FGA50N100BNTD2 is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 1000V 50A 156W TO3P. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-3P-3, SC-65-3, current - collector (ic) (max) 50 A.

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In Stock: 5,434

Specifications

17 parameters
Product StatusObsolete
IGBT TypeNPT and Trench
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)200 A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
Power - Max156 W
Switching Energy-
Input TypeStandard
Gate Charge257 nC
Td (on/off) @ 25°C34ns/243ns
Test Condition600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)75 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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