FGA30N120FTDTU

In Stock: 9,560
FGA30N120FTDTU - onsemi - Transistors - IGBTs - Single
REF: FGA30N120FTDTU onsemi
FGA30N120FTDTU

onsemi

IGBT 1200V 60A 339W TO3P

FGA30N120FTDTU is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 1200V 60A 339W TO3P. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-3P-3, SC-65-3, current - collector (ic) (max) 60 A.

In Stock: 9,560

Specifications

17 parameters
Product StatusObsolete
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)90 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
Power - Max339 W
Switching Energy-
Input TypeStandard
Gate Charge208 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)730 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN

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