SILICON CARBIDE DIODE 650V 10A P
FFSM1065B is a Diodes - Rectifiers - Single manufactured by onsemi. SILICON CARBIDE DIODE 650V 10A P. Key specifications: mounting type Surface Mount, package / case 4-PowerTSFN.
In Stock: 2,922
| Product Status | Active |
|---|---|
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 13.5A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
|---|---|
| Capacitance @ Vr, F | 424pF @ 1V, 100kHz |
| Mounting Type | Surface Mount |
| Package / Case | 4-PowerTSFN |
| Supplier Device Package | 4-PQFN (8x8) |
| Operating Temperature - Junction | -55°C ~ 175°C |
onsemi
MURA160T3G
0.44000
RFQ
Vishay General Semiconductor - Diodes Division
RS1J-E3/61T
0.50000
RFQ
NXP USA Inc.
PMEG1201AESFC315
0.04000
RFQ
Taiwan Semiconductor Corporation
1N4005G A0G
0.40000
RFQ
NTE Electronics, Inc
NTE558
1.90000
RFQ
Vishay General Semiconductor - Diodes Division
V2PM10L-M3/H
0.44000
RFQ
Submit your RFQ and get a quote within 24 hours.
