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FDP2D3N10C

In Stock: 9,448
FDP2D3N10C - onsemi - Transistors - FETs, MOSFETs - Single
REF: FDP2D3N10C onsemi
FDP2D3N10C

onsemi

MOSFET N-CH 100V 222A TO220-3

FDP2D3N10C is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 100V 222A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

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In Stock: 9,448

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C222A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs152 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11180 pF @ 50 V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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