Name: FDD3860-G
Brand: onsemi
SKU: FDD3860-G
Availability: InStock

REF: FDD3860-G onsemi

FDD3860-G

100V N-CHANNEL POWERTRENCH MOSFE

FDD3860-G is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. 100V N-CHANNEL POWERTRENCH MOSFE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 2,879

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	6.2A (Ta), 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	36mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1740 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.75W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63