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FCP650N80Z

In Stock: 574
FCP650N80Z - onsemi - Transistors - FETs, MOSFETs - Single
REF: FCP650N80Z onsemi
FCP650N80Z

onsemi

MOSFET N-CH 800V 10A TO220

FCP650N80Z is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 800V 10A TO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 574

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1565 pF @ 100 V
FET Feature-
Power Dissipation (Max)162W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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