RFQ List My Parts 0
Get a Quote Contact

FAM65HR51DS2

In Stock: 6,609
FAM65HR51DS2 - onsemi - Transistors - IGBTs - Modules
REF: FAM65HR51DS2 onsemi
FAM65HR51DS2

onsemi

IGBT MODULE 650V 33A 135W

FAM65HR51DS2 is a Transistors - IGBTs - Modules manufactured by onsemi. IGBT MODULE 650V 33A 135W. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), current - collector (ic) (max) 33 A, power - max 135 W.

Datasheet Request a Quote

In Stock: 6,609

Tiered Pricing USD
1+ $32.2700 —
72+ $27.3450 -15% BEST

Specifications

15 parameters
Product StatusActive
IGBT Type-
ConfigurationHalf Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)33 A
Power - Max135 W
Vce(on) (Max) @ Vge, Ic-
Current - Collector Cutoff (Max)-
Input Capacitance (Cies) @ Vce4.86 nF @ 400 V
InputStandard
NTC ThermistorNo
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Case-
Supplier Device Package-

Related Products

FS15R06XL4BOMA1 - Infineon Technologies Infineon Technologies FS15R06XL4BOMA1 25.20000 RFQ F4250R17MP4B11BPSA1 - Infineon Technologies Infineon Technologies F4250R17MP4B11BPSA1 181.62000 RFQ FP75R12KT4PB11BPSA1 - Infineon Technologies Infineon Technologies FP75R12KT4PB11BPSA1 150.92000 RFQ F3L150R07W2H3B11BPSA1 - Infineon Technologies Infineon Technologies F3L150R07W2H3B11BPSA1 96.48000 RFQ FD300R12KS4HOSA1 - Infineon Technologies Infineon Technologies FD300R12KS4HOSA1 120.55500 RFQ FS450R12OE4PBOSA1 - Infineon Technologies Infineon Technologies FS450R12OE4PBOSA1 565.75000 RFQ

Manufacturers in Transistors - IGBTs - Modules

Vishay General Semiconductor - Diodes Division Microsemi Corporation Toshiba Semiconductor and Storage IXYS Powerex Inc. Alpha & Omega Semiconductor Inc. GeneSiC Semiconductor SemiQ

Need a Quote for FAM65HR51DS2?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Transistors - IGBTs - Modules
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →