EMF5XV6T1G - onsemi - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
REF: EMF5XV6T1G onsemi
EMF5XV6T1G

onsemi

TRANS PREBIAS 1NPN 1PNP SOT563

EMF5XV6T1G is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by onsemi. TRANS PREBIAS 1NPN 1PNP SOT563. Key specifications: mounting type Surface Mount, package / case SOT-563, SOT-666, current - collector (ic) (max) 100mA, 500mA, power - max 357mW.

In Stock: 6,463

Specifications

14 parameters
Product StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)50V, 12V
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)500nA, 100nA (ICBO)
Frequency - Transition-
Power - Max357mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

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