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BD809G

In Stock: 3,655
BD809G - onsemi - Transistors - Bipolar (BJT) - Single
REF: BD809G onsemi
BD809G

onsemi

TRANS NPN 80V 10A TO220

BD809G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN 80V 10A TO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 10 A.

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In Stock: 3,655

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic1.1V @ 300mA, 3A
Current - Collector Cutoff (Max)1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 4A, 2V
Power - Max90 W
Frequency - Transition1.5MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

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Manufacturers in Transistors - Bipolar (BJT) - Single

NXP USA Inc. Nexperia USA Inc. Microsemi Corporation Toshiba Semiconductor and Storage Diotec Semiconductor Central Semiconductor Corp Rectron USA NTE Electronics, Inc Sanken Sanyo Ampleon USA Inc.

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