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BD681G

In Stock: 7,388
BD681G - onsemi - Transistors - Bipolar (BJT) - Single
REF: BD681G onsemi
BD681G

onsemi

TRANS NPN DARL 100V 4A TO126

BD681G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN DARL 100V 4A TO126. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-225AA, TO-126-3, current - collector (ic) (max) 4 A.

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In Stock: 7,388

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Power - Max40 W
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126

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Manufacturers in Transistors - Bipolar (BJT) - Single

NXP USA Inc. Nexperia USA Inc. Microsemi Corporation Toshiba Semiconductor and Storage Diotec Semiconductor Central Semiconductor Corp Rectron USA NTE Electronics, Inc Sanken Sanyo Ampleon USA Inc.

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