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BD159G

In Stock: 3,017
BD159G - onsemi - Transistors - Bipolar (BJT) - Single
REF: BD159G onsemi
BD159G

onsemi

TRANS NPN 350V 0.5A TO126

BD159G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN 350V 0.5A TO126. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 150°C (TJ), package / case TO-225AA, TO-126-3, current - collector (ic) (max) 500 mA.

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In Stock: 3,017

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)350 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Power - Max20 W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126

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Manufacturers in Transistors - Bipolar (BJT) - Single

NXP USA Inc. Nexperia USA Inc. Microsemi Corporation Toshiba Semiconductor and Storage Diotec Semiconductor Central Semiconductor Corp Rectron USA NTE Electronics, Inc Sanken Sanyo Ampleon USA Inc.

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