AFGY120T65SPD - onsemi - Transistors - IGBTs - Single
REF: AFGY120T65SPD onsemi
AFGY120T65SPD

onsemi

IGBT - 650 V 120 A FS3 FOR EV TR

AFGY120T65SPD is a Transistors - IGBTs - Single manufactured by onsemi. IGBT - 650 V 120 A FS3 FOR EV TR. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 160 A.

In Stock: 6,058

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)160 A
Current - Collector Pulsed (Icm)360 A
Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 120A
Power - Max714 W
Switching Energy6.6mJ (on), 3.8mJ (off)
Input TypeStandard
Gate Charge125 nC
Td (on/off) @ 25°C40ns/80ns
Test Condition400V, 120A, 5Ohm, 15V
Reverse Recovery Time (trr)107 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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