4MP10CH-TL-E - onsemi - Transistors - Bipolar (BJT) - RF
REF: 4MP10CH-TL-E onsemi
4MP10CH-TL-E

onsemi

BIP NPN 0.1A 200V

4MP10CH-TL-E is a Transistors - Bipolar (BJT) - RF manufactured by onsemi. BIP NPN 0.1A 200V. Key specifications: mounting type Surface Mount, package / case SC-96, current - collector (ic) (max) 100mA, power - max 600mW.

In Stock: 5,657

Specifications

13 parameters
Product StatusObsolete
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)200V
Frequency - Transition400MHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max600mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 10V
Current - Collector (Ic) (Max)100mA
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseSC-96
Supplier Device Package3-CPH

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