2SJ635-TL-E - onsemi - Transistors - FETs, MOSFETs - Single
REF: 2SJ635-TL-E onsemi
2SJ635-TL-E

onsemi

2SJ635 - P-CHANNEL SILICON MOSFE

2SJ635-TL-E is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. 2SJ635 - P-CHANNEL SILICON MOSFE. Key specifications: mounting type Through Hole, operating temperature 150°C, package / case TO-251-3 Short Leads, IPak, TO-251AA.

In Stock: 4,400

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs60mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 20 V
FET Feature-
Power Dissipation (Max)1W (Ta), 30W (Tc)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTP
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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