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2SC5706-P-E

In Stock: 4,705
2SC5706-P-E - onsemi - Transistors - Bipolar (BJT) - Single
REF: 2SC5706-P-E onsemi
2SC5706-P-E

onsemi

TRANS NPN 100V 5A TP

2SC5706-P-E is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN 100V 5A TP. Key specifications: mounting type Through Hole, package / case TO-251-3 Short Leads, IPak, TO-251AA, current - collector (ic) (max) 5 A, power - max 800 mW.

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In Stock: 4,705

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic240mV @ 100mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 500mA, 2V
Power - Max800 mW
Frequency - Transition400MHz
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTP

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Manufacturers in Transistors - Bipolar (BJT) - Single

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