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2N5830_D26Z

In Stock: 3,426
2N5830_D26Z - onsemi - Transistors - Bipolar (BJT) - Single
REF: 2N5830_D26Z onsemi
2N5830_D26Z

onsemi

TRANS NPN 100V 0.2A TO92-3

2N5830_D26Z is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN 100V 0.2A TO92-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-226-3, TO-92-3 (TO-226AA) Formed Leads, current - collector (ic) (max) 200 mA.

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In Stock: 3,426

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Power - Max625 mW
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3

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Manufacturers in Transistors - Bipolar (BJT) - Single

NXP USA Inc. Nexperia USA Inc. Microsemi Corporation Toshiba Semiconductor and Storage Diotec Semiconductor Central Semiconductor Corp Rectron USA NTE Electronics, Inc Sanken Sanyo Ampleon USA Inc.

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