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PHE13009/DG,127

In Stock: 4,980
PHE13009/DG,127 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single
REF: PHE13009/DG,127 NXP USA Inc.
PHE13009/DG,127

NXP USA Inc.

NOW WEEN - PHE13009 - POWER BIPO

PHE13009/DG,127 is a Transistors - Bipolar (BJT) - Single manufactured by NXP USA Inc.. NOW WEEN - PHE13009 - POWER BIPO. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 12 A.

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In Stock: 4,980

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)400 V
Vce Saturation (Max) @ Ib, Ic2V @ 1.6A, 8A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 5A, 5V
Power - Max80 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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