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PHE13003A,412

In Stock: 6,502
PHE13003A,412 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single
REF: PHE13003A,412 NXP USA Inc.
PHE13003A,412

NXP USA Inc.

NOW WEEN - PHE13003A - POWER BIP

PHE13003A,412 is a Transistors - Bipolar (BJT) - Single manufactured by NXP USA Inc.. NOW WEEN - PHE13003A - POWER BIP. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-226-3, TO-92-3 (TO-226AA), current - collector (ic) (max) 1 A.

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In Stock: 6,502

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)400 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 250mA, 750mA
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 400mA, 5V
Power - Max2.1 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3

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