PDTC124ES,126 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: PDTC124ES,126 NXP USA Inc.
PDTC124ES,126

NXP USA Inc.

TRANS PREBIAS NPN 500MW TO92-3

PDTC124ES,126 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by NXP USA Inc.. TRANS PREBIAS NPN 500MW TO92-3. Key specifications: mounting type Through Hole, package / case TO-226-3, TO-92-3 (TO-226AA) Formed Leads, current - collector (ic) (max) 100 mA, power - max 500 mW.

In Stock: 6,439

Specifications

14 parameters
Product StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition-
Power - Max500 mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3

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