RFQ List My Parts 0
Get a Quote Contact

PDTC123TMB,315

In Stock: 100,000
PDTC123TMB,315 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: PDTC123TMB,315 NXP USA Inc.
PDTC123TMB,315

NXP USA Inc.

NOW NEXPERIA PDTC123TMB - SMALL

PDTC123TMB,315 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by NXP USA Inc.. NOW NEXPERIA PDTC123TMB - SMALL. Key specifications: mounting type Surface Mount, package / case SC-101, SOT-883, current - collector (ic) (max) 100 mA, power - max 250 mW.

Datasheet Request a Quote

In Stock: 100,000

Specifications

14 parameters
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition230 MHz
Power - Max250 mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageDFN1006B-3

Related Products

PDTC114EE,115-NXP - NXP USA Inc. NXP USA Inc. PDTC114EE,115-NXP 0.02000 RFQ DTA143ZM3T5G - onsemi onsemi DTA143ZM3T5G 0.31000 RFQ SMUN2240T1G - onsemi onsemi SMUN2240T1G 0.03630 RFQ MMUN2240LT1G - onsemi onsemi MMUN2240LT1G 0.17000 RFQ DDTA144EE-7 - Diodes Incorporated Diodes Incorporated DDTA144EE-7 0.35000 RFQ RN2103MFV,L3F(CT - Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage RN2103MFV,L3F(CT 0.18000 RFQ

Manufacturers in Transistors - Bipolar (BJT) - Single, Pre-Biased

Nexperia USA Inc. Comchip Technology Micro Commercial Co Toshiba Semiconductor and Storage Diotec Semiconductor Rectron USA NTE Electronics, Inc Renesas NXP Semiconductors Sanyo Yangzhou Yangjie Electronic Technology Co.,Ltd

Need a Quote for PDTC123TMB,315?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Transistors - Bipolar (BJT) - Single, Pre-Biased
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →