PDTB123YS,126 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: PDTB123YS,126 NXP USA Inc.
PDTB123YS,126

NXP USA Inc.

TRANS PREBIAS PNP 500MW TO92-3

PDTB123YS,126 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by NXP USA Inc.. TRANS PREBIAS PNP 500MW TO92-3. Key specifications: mounting type Through Hole, package / case TO-226-3, TO-92-3 (TO-226AA) Formed Leads, current - collector (ic) (max) 500 mA, power - max 500 mW.

In Stock: 4,171

Specifications

14 parameters
Product StatusObsolete
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500 mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3

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