PDTA143EMB,315 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single
REF: PDTA143EMB,315 NXP USA Inc.
PDTA143EMB,315

NXP USA Inc.

NOW NEXPERIA PDTA143EMB - SMALL

PDTA143EMB,315 is a Transistors - Bipolar (BJT) - Single manufactured by NXP USA Inc.. NOW NEXPERIA PDTA143EMB - SMALL. Key specifications: mounting type Surface Mount, package / case SC-101, SOT-883, current - collector (ic) (max) 100 mA, power - max 250 mW.

In Stock: 200,678

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Power - Max250 mW
Frequency - Transition180MHz
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageDFN1006B-3

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