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PDTA115EMB,315

In Stock: 199,970
PDTA115EMB,315 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: PDTA115EMB,315 NXP USA Inc.
PDTA115EMB,315

NXP USA Inc.

NOW NEXPERIA PDTA115EMB - SMALL

PDTA115EMB,315 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by NXP USA Inc.. NOW NEXPERIA PDTA115EMB - SMALL. Key specifications: mounting type Surface Mount, package / case SC-101, SOT-883, current - collector (ic) (max) 20 mA, power - max 250 mW.

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In Stock: 199,970

Specifications

14 parameters
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)20 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)100 kOhms
Resistor - Emitter Base (R2)100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition180 MHz
Power - Max250 mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageDFN1006B-3

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