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PBSS4350SPN,115

In Stock: 7,438
PBSS4350SPN,115 - NXP USA Inc. - Transistors - Bipolar (BJT) - Arrays
REF: PBSS4350SPN,115 NXP USA Inc.
PBSS4350SPN,115

NXP USA Inc.

NOW NEXPERIA PBSS4350SPN - SMALL

PBSS4350SPN,115 is a Transistors - Bipolar (BJT) - Arrays manufactured by NXP USA Inc.. NOW NEXPERIA PBSS4350SPN - SMALL. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), current - collector (ic) (max) 2.7A.

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In Stock: 7,438

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)2.7A
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic340mV @ 270mA, 2.7A, 370mV @ 270mA, 2.7A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1A, 2V / 180 @ 1A, 2V
Power - Max750mW
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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