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PBSS4230PANP,115

In Stock: 21,000
PBSS4230PANP,115 - NXP USA Inc. - Transistors - Bipolar (BJT) - Arrays
REF: PBSS4230PANP,115 NXP USA Inc.
PBSS4230PANP,115

NXP USA Inc.

NOW NEXPERIA PBSS4230PANP - SMAL

PBSS4230PANP,115 is a Transistors - Bipolar (BJT) - Arrays manufactured by NXP USA Inc.. NOW NEXPERIA PBSS4230PANP - SMAL. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 6-UFDFN Exposed Pad, current - collector (ic) (max) 2A.

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In Stock: 21,000

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic290mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1A, 2V
Power - Max510mW
Frequency - Transition120MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UFDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)

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