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MRFE6VP6600NR3,528

In Stock: 6,660
MRFE6VP6600NR3,528 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single
REF: MRFE6VP6600NR3,528 NXP USA Inc.
MRFE6VP6600NR3,528

NXP USA Inc.

WIDEBAND RF POWER LDMOS TRANSIST

MRFE6VP6600NR3,528 is a Transistors - Bipolar (BJT) - Single manufactured by NXP USA Inc.. WIDEBAND RF POWER LDMOS TRANSIST.

Datasheet Request a Quote

In Stock: 6,660

Specifications

13 parameters
Product StatusActive
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max-
Frequency - Transition-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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