BUJ303B,127 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single
REF: BUJ303B,127 NXP USA Inc.
BUJ303B,127

NXP USA Inc.

NOW WEEN - BUJ303B - POWER BIPOL

BUJ303B,127 is a Transistors - Bipolar (BJT) - Single manufactured by NXP USA Inc.. NOW WEEN - BUJ303B - POWER BIPOL. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 5 A.

In Stock: 5,278

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)400 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 1A, 3A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce23 @ 800mA, 3V
Power - Max100 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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