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BLF8G10LS-160,112

In Stock: 9,959
BLF8G10LS-160,112 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: BLF8G10LS-160,112 NXP USA Inc.
BLF8G10LS-160,112

NXP USA Inc.

RF PFET, 1-ELEMENT, ULTRA HIGH F

BLF8G10LS-160,112 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. RF PFET, 1-ELEMENT, ULTRA HIGH F. Key specifications: voltage - rated 65 V, package / case SOT-502B, current rating (amps) 5µA, power - output 35W.

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In Stock: 9,959

Specifications

12 parameters
Product StatusActive
Transistor TypeLDMOS
Frequency920MHz ~ 960MHz
Gain19.7dB
Voltage - Test30 V
Current Rating (Amps)5µA
Noise Figure-
Current - Test1.1 A
Power - Output35W
Voltage - Rated65 V
Package / CaseSOT-502B
Supplier Device PackageSOT502B

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