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BLF7G10L-250,112

In Stock: 78
BLF7G10L-250,112 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: BLF7G10L-250,112 NXP USA Inc.
BLF7G10L-250,112

NXP USA Inc.

RF PFET, 1-ELEMENT, ULTRA HIGH F

BLF7G10L-250,112 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. RF PFET, 1-ELEMENT, ULTRA HIGH F. Key specifications: voltage - rated 65 V, package / case SOT-502A, current - test 1.8 A, power - output 60W.

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In Stock: 78

Specifications

12 parameters
Product StatusActive
Transistor TypeLDMOS
Frequency920MHz ~ 960MHz
Gain19.5dB
Voltage - Test30 V
Current Rating (Amps)-
Noise Figure-
Current - Test1.8 A
Power - Output60W
Voltage - Rated65 V
Package / CaseSOT-502A
Supplier Device PackageLDMOST

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