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BLF6G10LS-135RN112

In Stock: 92
BLF6G10LS-135RN112 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single
REF: BLF6G10LS-135RN112 NXP USA Inc.
BLF6G10LS-135RN112

NXP USA Inc.

POWER LDMOS TRANSISTOR, SOT502 (

BLF6G10LS-135RN112 is a Transistors - Bipolar (BJT) - Single manufactured by NXP USA Inc.. POWER LDMOS TRANSISTOR, SOT502 (.

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In Stock: 92

Specifications

13 parameters
Product StatusActive
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max-
Frequency - Transition-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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