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BLF10H6600P112

In Stock: 14
BLF10H6600P112 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single
REF: BLF10H6600P112 NXP USA Inc.
BLF10H6600P112

NXP USA Inc.

POWER LDMOS TRANSISTOR, SOT539 (

BLF10H6600P112 is a Transistors - Bipolar (BJT) - Single manufactured by NXP USA Inc.. POWER LDMOS TRANSISTOR, SOT539 (.

Datasheet Request a Quote

In Stock: 14

Specifications

13 parameters
Product StatusActive
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max-
Frequency - Transition-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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